View irf1104 datasheet:

PD- 9.1724AIRF1104PRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.009 Fast SwitchingG Fully Avalanche RatedID = 100A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized devicedesign that HEXFET Power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device for use in a wide varietyof applications.The TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resistance and low package cost of the TO-220 contribut

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