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View irf1404z datasheet:

irf1404zirf1404z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404ZIIRF1404ZFEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 120 ADI Drain Current-Single Pulsed 710 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.75Channel-to-ambient thermal resistance/WRth(ch-a)

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1404z.pdf Design, MOSFET, Power

 irf1404z.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1404z.pdf Database, Innovation, IC, Electricity

 

 
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