View irf1405z datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 75 ADI Drain Current-Single Pulsed 600 ADMP Total Dissipation @T =25 230 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.65Channel-to-ambient thermal resistance/WRth(ch-a) 6

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