View irf2804 datasheet:

PD - 94436BAUTOMOTIVE MOSFETIRF2804HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 2.3m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processing techniques to achieve extremelylow on-resistance per silicon area. Additional features of this design area 175C junction operating temperature, fast switching speed and im-proved repetitive avalanche rating . These features combine to make thisdesign an extremely efficient and reliable device for use in Automotiveapplications and a wide variety of other applications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @

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