View irf2804lpbf irf2804pbf irf2804spbf datasheet:

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in a wide variety of otherTO-220AB D2Pak TO-262applications.IRF2804PbF IRF2804SPbF IRF2804LPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 270 AContinuous Drain Current, VGS @ 10V (Si

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