View irf2804s-7ppbf datasheet:

PD - 97057AIRF2804S-7PPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating Temperaturel Fast SwitchingVDSS = 40Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeGRDS(on) = 1.6mDescriptionSThis HEXFET Power MOSFET utilizes the latestID = 160AS (Pin 2, 3 ,5,6,7)processing techniques to achieve extremely lowG (Pin 1)on-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in a wide variety ofapplications.Absolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 320 AID @ TC = 100C Continuous Drain Current,

Keywords - ALL TRANSISTORS DATASHEET

 irf2804s-7ppbf.pdf Design, MOSFET, Power

 irf2804s-7ppbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf2804s-7ppbf.pdf Database, Innovation, IC, Electricity