View irf2804s datasheet:

isc N-Channel MOSFET Transistor IRF2804SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 40 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@T =100 200 AD CI Pulse Drain Current 1080 ADMP Total Dissipation 330 WtotT Max. Operating Junction Temperature 175 jT Storage Temperature Range -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.45th j-c1isc websitewww.iscsemi.com isc & iscsemi is regis

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