View irf3710pbf datasheet:

PD - 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient and reliable device foruse in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowTO-220ABthermal resistance and low package cost of the TO-2

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