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View irf460 datasheet:

irf460irf460

isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 21 ADP Total Dissipation@TC=25 300 WtotT Max. Operating Junction Temperature -55~150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 0.42th j-c/WR Therma

 

Keywords - ALL TRANSISTORS DATASHEET

 irf460.pdf Design, MOSFET, Power

 irf460.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf460.pdf Database, Innovation, IC, Electricity

 

 
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