View irf510a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 )5.6IDAContinuous Drain Current (TC=100 )41IDM Drain Current-Pulsed AO 20VGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJO 631IAR Avalanche Current 5.6 AO1EAR Repetitive Avalanche Energy O 3.3 mJ3dv/dt Peak Diode Recovery dv/dt V/nsO 6.5Total Power Dissipation (TC=25 )33 WPDLinear Derating Factor

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