View irf520 datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FEATURESTypical R =0.27DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control ,Audio AmplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 10 ADI Drain Current-Single Plused 40 ADMP Total Dissipation @T =25 70 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -65~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 2.14th j-c/WR The

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