View irf520a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 )9.2IDAContinuous Drain Current (TC=100 )6.5IDM Drain Current-Pulsed A37VGS Gate-to-Source VoltageV 20EAS Single Pulsed Avalanche EnergymJ113IAR Avalanche Current A9.2EAR Repetitive Avalanche EnergymJ4.5dv/dt Peak Diode Recovery dv/dt V/ns6.5Total Power Dissipation (TC=25 )W45PDLinear Derating FactorW/ 0.3Operating Junction andTJ , TSTG

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