View irf530nspbf datasheet:

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET powerMOSFETs are well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable of accommodatingdie sizes up to HEX-4. It provides the highest power capability and theD2Pak TO-262lowest possible on-resistance in any existing s

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