View irf540.rev3.2 datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DProduct PreviewIRF540TMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high27 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSefficient design also offers a draintosource diode with a fastRDS(on) = 0.070 OHMSrecovery time. Designed for low voltage, high speed switchingapplications in power supplies, converters, and PWM motorcontrols. These devices are particularly well suited for bridgecircuits where diode speed and commutating safe operating areaare critical and offer additional safety margin against unexpectedvoltage transients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to aDiscrete Fa

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 irf540.rev3.2.pdf Design, MOSFET, Power

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