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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DAdvance InformationIRF540TMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high27 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTSefficient design also offers a draintosource diode with a fastRDS(on) = 0.077 OHMSrecovery time. Designed for low voltage, high speed switchingapplications in power supplies, converters, PWM motor controls,these devices are particularly well suited for bridge circuits wherediode speed and commutating safe operating area are critical andoffer additional safety margin against unexpected voltage tran-sients. Avalanche Energy Specified D SourcetoDrain Diode Recovery Time Comparable to aDiscrete

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