View irf540 s 1 datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 77 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic envelope using trench technology.Applications:- d.c. to d.c. converters switched mode power supplies T.V. and computer monitor power suppliesThe IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package.PINNING SOT78 (TO220AB) SOT404 (D2PAK)PIN DESCRIPTIONtabtab1 gate2 drain13 source2tab drain1 31 2 3LIMITING VALUESLimiting values in accordance with the Absolute Maximum Sy

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