View irf540a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 )28IDAContinuous Drain Current (TC=100 )19.81IDM Drain Current-Pulsed A110OVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ523OIAR Avalanche Current 128 AOEAR Repetitive Avalanche Energy 110.7 mJO3dv/dt Peak Diode Recovery dv/dt V/ns6.5 OTotal Power Dissipation (TC=25 ) 107 WPDLinear Derating

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