View irf540fi datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540FIFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 16 ADI Drain Current-Single Plused 120 ADMP Total Dissipation @T =25 45 WD CT Max. Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Therma

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