View irf620a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200Continuous Drain Current (TC=25 o )C 5IDAContinuous Drain Current (TC=100 o C)3.2IDM Drain Current-Pulsed A1 18O_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2 mJ67OIAR Avalanche Current 5 A1OEAR Repetitive Avalanche Energy 14.7 mJOdv/dt Peak Diode Recovery dv/dt 35.0 V/nsOTotal Power Dissipation (TC=25 o )C 47 WPDoLinear Derating Factor C0.38 Operating Junction andTJ ,

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