View irf6218 datasheet:

isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -150 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous -27 ADI Drain Current-Single Pulsed -110 ADMP Total Dissipation @T =25 250 WD CMax. Operating Junction Temperature 175 TjStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(j-c) Channel-to-case thermal resistance 0.61Rth(j-a) Channel-to-ambient thermal resistance /W

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