View irf624a datasheet:
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V250oContinuous Drain Current (TC=25 C)4.1IDAoCContinuous Drain Current (TC=100 )2.61IDM Drain Current-Pulsed AO 16VGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJO 841IAR Avalanche Current O 4.1 AEAR Repetitive Avalanche Energy 1O 4.9 mJ3dv/dt Peak Diode Recovery dv/dt V/ns4.8 OTotal Power Dissipation (TC=25 oC)49 WPDLinear Derating Factor W/ oC0.39Operating Junction andTJ
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