View irf630 rf1s630sm datasheet:

IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode SOA is Power Dissipation Limitedof operation. All of these power MOSFETs are designed for Nanosecond Switching Speedsapplications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Linear Transfer Characteristicspower bipolar switching transistors requiring high speed and High Input Impedancelow gate drive power. These types can be operated directly Related Literaturefrom integrated circuits.-

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