View irf630 s 1 datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-lineswitched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuitsand general purpose switching applications.The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded packageThe IRF630S is supplied in the SOT404 (D2PAK) surface mounting packagePINNING SOT78 (TO220AB) SOT404 (D2PAK)PIN DESCRIPTIONtabtab1 gate2 drain13 source2tab drain1 31 2 3LIMITING VALUESLimiting values i

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