View irf630a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oContinuous Drain Current (TC=25 C)9IDAoCContinuous Drain Current (TC=100 )5.7IDM Drain Current-Pulsed 1 36 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ162OIAR Avalanche Current 1 9 AOEAR Repetitive Avalanche Energy 1 mJ7.2O3dv/dt Peak Diode Recovery dv/dt V/ns5.0 OTotal Power Dissipation (TC=25 oC )72 WPDLinear Derating Factor W/ o 0.57 COperating Junction andTJ ,

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