View irf630b datasheet:

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for unin- terrupted power supply and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNITARAMETER VDSS Drain-Source Voltage (VGS=0) 200 VVGS Gate-Source Voltage 30 V ID Drain Current-continuous@ TC=25 9 APD Power Dissipation@TC=25 72 WTj Max. Operating Junction Temperature 150 Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT/WRth j-c Thermal Resistance,Junction to Case 1.74

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