View irf630mfp datasheet:

IRF630MFPwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.265f = 60 Hz) RoHSQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 5 Dynamic dV/dt RatingQgd (nC) 8 Low Thermal ResistanceConfiguration Single Lead (Pb)-free AvailableDTO-220 FULLPAKGSS N-Channel MOSFET DGABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 200V Gate-Source Voltage VGS 20TC = 25 C 10Continuous Drain Current VGS at 10 V IDTC = 100 C 6.5 APulsed Drain Currenta IDM 32Linear Derating Factor 0.24 W/C Single Pulse Avalanche Energyb EAS 36 mJ Repetitive Avalanche Currenta IAR 7.2 A Repeti

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