View irf630nstrrpbf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis device is n-channel, enhancement mode, power MOSFETdesigned especially for high power, high speed applications,such as switching power supplies,UPS, AC and DC motor con-trols, relay and solenoid drivers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 9.3 ADP Total Dissipation@TC=25 82 WDT Max. Operating Junction Te

Keywords - ALL TRANSISTORS DATASHEET

 irf630nstrrpbf.pdf Design, MOSFET, Power

 irf630nstrrpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf630nstrrpbf.pdf Database, Innovation, IC, Electricity