View irf630pbf sihf630 datasheet:

IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generation Power MOSFETs from Vishay provide theTO-220ABdesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.GThe TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationSlevels to approximately 50 W. The low thermal resistanceDSGand low package cost of the TO-220AB contribute to itsN-Channel MOSFET wide acceptance throughout the industry

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 irf630pbf sihf630.pdf Design, MOSFET, Power

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