View irf630s datasheet:

SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Continuous Drain Current ID Ta = 100 6.3A Pulsed Drain Current IDM 36 Peak Non-Repetitive Avalanche Current IAS 9 Power Dissipation PD 88 W Non-Repetitive Avalanche Energy EAS 250 mJ Thermal Resistance.Junction- to-Ambient RthJA 50/W Thermal Resistance Junction to Mounting Base RthJB 1.7 Junction Temperature TJ 175 Storage Temperature Range Tstg -55 to 1751www.kexin.com.cnSMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Electrical Characteristics Ta =

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