View irf634 datasheet:

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)0.45;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 250 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 8.1 APtot Total Dissipation@TC=25 74 WTj Max. Operating Junction temperature 150 Tstg Storage temperature -65~150 TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNITV(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA 250 VVGS(TH) Gate threshold voltage VDS= VGS; ID=0.25mA 2 4 VRDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.1A 450 m 100IGSS Gate source leakage current VGS=20V;VDS=0 nA IDSS Zero gate voltage dra

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