View irf634b datasheet:

December 2013IRF634BN-Channel BFET MOSFET250 V, 8.1 A, 450 mDescription FeaturesThese N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 29 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF)been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand Fast Switchinghigh energy pulse in the avalanche and commutation 100% Avalanche Testedmode. These devices are well suited for high efficiency Improved dv/dt Capabilityswitching DC/DC converters and switch mode powersupplies.DGGDSTO-220SAbsolute Maximum Ratings TC = 25C unless otherwise noted.Symbol Parameter IRF634B_FP001 UnitVDSSDrain-Source Voltage 250 VIDDrain

Keywords - ALL TRANSISTORS DATASHEET

 irf634b.pdf Design, MOSFET, Power

 irf634b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf634b.pdf Database, Innovation, IC, Electricity