View irf634n datasheet:

PD - 94310IRF634NIRF634NSIRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating TemperatureD Fast SwitchingVDSS = 250V Fully Avalanche Rated Ease of ParallelingRDS(on) = 0.435 Simple Drive RequirementsGDescriptionFifth Generation HEXFET Power MOSFETs from InternationalID = 8.0ARectifier utilize advanced processing techniques to achieve Sextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized devicedesign that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient and reliabledevice for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels toapproximately 50 watts. The low thermal resistance and low

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