View irf636 datasheet:

Advanced Power MOSFETFEATURESBVDSS = 275 V Avalanche Rugged TechnologyRDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 275V Lower RDS(ON) : 0.380 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V275Continuous Drain Current (TC=25 )8.1IDAContinuous Drain Current (TC=100 )5.1IDM Drain Current-Pulsed A32VGS Gate-to-Source Voltage 20 VEAS Single Pulsed Avalanche Energy mJ195IAR Avalanche Current 8.1 AEAR Repetitive Avalanche Energy 7.5 mJdv/dt Peak Diode Recovery dv/dt V/ns4.8Total Power Dissipation (TC=25 )75 WPDLinear Derating Factor W/0.60Operating Junction andTJ , TSTG - 55 to +150Storage Temper

Keywords - ALL TRANSISTORS DATASHEET

 irf636.pdf Design, MOSFET, Power

 irf636.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf636.pdf Database, Innovation, IC, Electricity