View irf640 datasheet:

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNITARAMETER VDSS Drain-Source Voltage (VGS=0) 200 VVGS Gate-Source Voltage 20 V ID Drain Current-continuous@ TC=25 18 APtot Total Dissipation@TC=25 125 WTj Max. Operating Junction Temperature 150 Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT/WRth j-c Thermal Resistance,Junction to Case 1.0

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