View irf640 irf641 irf642 irf643 rf1s640 datasheet:

IRF640, IRF641, IRF642,S E M I C O N D U C T O RIRF643, RF1S640, RF1S640SM16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm,N-Channel Power MOSFETsJanuary 1998Features Description 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.18 and 0.22MOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown avalanche mode Single Pulse Avalanche Energy Ratedof operation. All of these power MOSFETs are designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high power Nanosecond Switching Speedbipolar switching transistors requiring high speed and low Linear Transfer Characteristicsgate drive power. These t

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