View irf640 s 1 datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-lineswitched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuitsand general purpose switching applications.The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package.PINNING SOT78 (TO220AB) SOT404 (D2PAK)PIN DESCRIPTIONtabtab1 gate2 drain13 source2tab drain1 31 2 3LIMITING VALUESLimiting value

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