View irf640a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oContinuous Drain Current (TC=25 C )18IDAContinuous Drain Current (TC=100 oC 11.4 )IDM Drain Current-Pulsed 1 72 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ216OIAR Avalanche Current 1 18 AOEAR Repetitive Avalanche Energy 1 mJ13.9O3dv/dt Peak Diode Recovery dv/dt V/ns5.0 OTotal Power Dissipation (TC=25 o )C 139 WPDoLinear Derating Factor C1.11Operating Junction

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