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View irf640b irfs640b datasheet:

irf640b_irfs640birf640b_irfs640b

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters foruninterrupted power supply and motor control.DG TO-220 TO-220FG D SG DSIRF Series IRFS SeriesSAbsolute Maximum Ratings TC = 25C unl

 

Keywords - ALL TRANSISTORS DATASHEET

 irf640b irfs640b.pdf Design, MOSFET, Power

 irf640b irfs640b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf640b irfs640b.pdf Database, Innovation, IC, Electricity

 

 
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