View irf640h datasheet:

RoHS IRF640 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(18A, 200Volts)DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.DD They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applicationsGsuch as switching regulators, convertors, motor drivers DG Sand drivers for high power bipolar switching transistorsDSrequiring high speed and low gate drive power. These transistors can be operated directly from TO-220AB integrated circuits. TO-263(D2PAK) (IRF640A)(IRF640H) FEATURES RDS(ON) = 0.180 @ VGS = 10V Ultra low gate charge(63nC max.)Low reverse transfer capacitance(CRSS = 91pF typical)D (Drain)

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