View irf640n datasheet:

PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a widevariety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The low thermal resistance andlow p

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