View irf640p datasheet:

IRF640Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage 200VVGSGate-Source Voltage 20TC = 25 C20IDContinuous Drain Current (TJ = 175 C)bTC = 125 C14IDMPulsed Drain Current 70 AISContinuous Source Current (Diode Conduction) 12IASAvalanche Current 12Single Pulse Avalanche Energy L = 0.1 mH EAS20 mJTC = 25 C126bPDMaximum Power Dissipation WTA = 25 C3aTJ, TstgOper

Keywords - ALL TRANSISTORS DATASHEET

 irf640p.pdf Design, MOSFET, Power

 irf640p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf640p.pdf Database, Innovation, IC, Electricity