View irf644b datasheet:

December 2013IRF644BN-Channel BFET MOSFET250 V, 14 A, 280 mDescription FeaturesThese N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (Typ. 47 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF)been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand Fast Switchinghigh energy pulse in the avalanche and commutation 100% Avalanche Testedmode. These devices are well suited for high efficiencyswitching DC/DC converters and switch mode power Improved dv/dt Capabilitysupplies.DGGDSTO-220SAbsolute Maximum Ratings TC = 25C unless otherwise noted.Symbol Parameter IRF644B_FP001 UnitVDSSDrain-Source Voltage 250 VIDDrain Cu

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