View irf644b irfs644b datasheet:

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converter andswitch mode power supplies.DG TO-220 TO-220FG D SG DSIRF Series IRFS SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter IRF644B IRFS644B UnitsVDSS

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