View irf8010 datasheet:

isc N-Channel MOSFET Transistor IRF8010IIRF8010FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 80 ADI Drain Current-Single Pulsed 320 ADMP Total Dissipation @T =25 260 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.57Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websitewww.isc

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