View irf8010l datasheet:

Isc N-Channel MOSFET Transistor IRF8010LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=2580I AD57Tc=100I Drain Current-Single Pulsed 320 ADMP Total Dissipation @T =25 260 WD CT Max. Operating Junction Temperature 175 chStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.571isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkIsc N-Channel MOSFET Transistor IRF8

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