All Transistors. Datasheet

 

View irf8010pbf datasheet:

irf8010pbfirf8010pbf

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand CurrentTO-220ABl Typical RDS(on) = 12mAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 80Continuous Drain Current, VGS @ 10VID @ TC = 100C 57 APulsed Drain Current IDM 320PD @TC = 25C Power Dissipation 260 WLinear Derating Factor 1.8 W/CVGS Gate-to-Source Voltage 20 Vdv/dt Peak Diode Recovery dv/dt 16 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range CSoldering Temperature,

 

Keywords - ALL TRANSISTORS DATASHEET

 irf8010pbf.pdf Design, MOSFET, Power

 irf8010pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf8010pbf.pdf Database, Innovation, IC, Electricity

 

 
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