View irf840 datasheet:

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.85(Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITVDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous 20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25 125 WMax. Operating Junction Temperature 150 TjStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth j-c Thermal Resistance,Junction to Case 1.0 /WRth j-a Thermal

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