View irf840a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V500oContinuous Drain Current (TC=25 C)8IDAoCContinuous Drain Current (TC=100 )5.1IDM Drain Current-Pulsed 1 32 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ640OIAR Avalanche Current 1 8 AOEAR Repetitive Avalanche Energy 1 mJ13.4O3dv/dt Peak Diode Recovery dv/dt V/ns3.5 OTotal Power Dissipation (TC=25 oC )134 WPDLinear Derating Factor W/ oC1.08 Operating Junction and

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