View irf840b datasheet:

IRF840Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.85- Low Input Capacitance (Ciss)Qg (max.) (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low Cost- Simple Gate Drive Circuitry- Low Figure-of-Merit (FOM): Ron x QgD- Fast SwitchingTO-220AB Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912 Note* Lead (Pb)-containing terminations are not RoHS-compliant.G Exemptions may apply.SAPPLICATIONSDG Consumer ElectronicsS- Displays (LCD or Plasma TV)N-Channel MOSFET Server and Telecom Power Supplies-

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