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View irf840lc datasheet:

irf840lcirf840lc

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 8.0I AD5.1T =100CI Drain Current-Single Pulsed 28 ADMP Total Dissipation 125 WDT Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.5/WRth(ch-a) Channel-to-ambient thermal resistance 621is

 

Keywords - ALL TRANSISTORS DATASHEET

 irf840lc.pdf Design, MOSFET, Power

 irf840lc.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf840lc.pdf Database, Innovation, IC, Electricity

 

 
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